Microelectronics reliability

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  Año 2009, Vol. 49, Número 7

  • Reliability analysis of temperature step-stress tests on III�V high concentrator solar cells.

    J.R. González, M. Vázquez, N. Núñez, C. Algora, Ignacio Rey-Stolle Prado, B. Galiana

    págs. 673-680

    

  • A surface potential and quasi-Fermi potential based drain current model for pocket-implanted MOS transistors in subthreshold regime.

    S. Baishya

    págs. 681-689

    

  • Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction.

    A. Ortiz-Conde, F.J. García-Sánchez, J. Muci, D.C. Lugo Muñoz, A.D. Latorre Rey, C.-S. Ho, J.J. Liou

    págs. 689-692

    

  • A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET's

    T.-K. Chiang

    págs. 693-698

    

  • Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect.

    R.K. Sharma, R. Gupta, M. Gupta, R.S. Gupta

    págs. 699-706

    

  • A method to eliminate the event accumulation problem from a memory affected by multiple bit upsets.

    J. Antonio Maestro, P. Reviriego

    págs. 707-715

    

  • The influence of electron-beam irradiation on electrical characteristics of metal insulator semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers.

    P. Thangadurai, W.D. Kaplan, V. Michelashvili, Gadi Eisenstein

    págs. 716-720

    

  • Intrinsic stress fracture energy measurements for PECVD thin films in the SiOxCyNz:H system.

    S.W. King, J.A. Gradner

    págs. 721-726

    

  • Fabrication of micro-moiré gratings on a strain sensor structure for deformation analysis with micro-moiré technique.

    H. Xie, S. Kishimoto, Y. Li, Q. Liu, Y. Zhao

    págs. 727-733

    

  • Electromigration on void formation of Sn3Ag1.5Cu FCBGA solder joints.

    M.-H.R. Jen, L.-C. Liu, Y.-S. Lai

    págs. 734-745

    

  • Interfacial microstructure and shear strength of Ag nano particle doped Sn�9Zn solder in ball grid array packages.

    A.K. Gain, Y.C. Chan, A. Sharif, N.B. Wong, Winco K.C. Yung

    págs. 746-753

    

  • Vibration reliability test and finite element analysis for flip chip solder joints.

    F.X. Che, J.H.L. Pang

    págs. 754-760

    

  • Drop impact reliability of edge-bonded lead-free chip scale packages.

    A. Farris, J. Pan, A. Liddicoat, M. Krist, N. Vickers, B.J. Toleno, D. Maslyk, D. Shangguan, J. Bath, D. Willie, D.A. Geiger

    págs. 761-770

    

  • Measuring stress next to Au ball bond during high temperature aging.

    M. Mayer, J.T. Moon, J. Persic

    págs. 771-781

    

  • The characterization of electrically conductive silver ink patterns on flexible substrates.

    S. Merilampi, T. Laine-Ma, P. Ruuskanen

    págs. 782-790

    

  • Sensitivity analysis of simplified Printed Circuit Board finite element models.

    R.A. Amy, G.S. Aglietti, G. Richardson

    págs. 791-799

    

  • Prototyping of a reliable 3D flexible IC cube package by laser micromachining.

    R. Berényi

    págs. 800-805

    

  • Feasibility study of non-conductive film (NCF) for plasma display panel (PDP) application.

    J.-S. Hwang, J.-Y. Kim, S.-C. Kang, D.-S. Seo, Y. Kwon

    págs. 806-812

    

  • Multi-functional systolic array with reconfigurable micro-power processing elements.

    E.I. Milovanovic, T.R. Nikolic, M.K. Stojcev, I.Z. Milovanovic

    págs. 813-820