Reliability comparison of 28 V–50 V GaN-on-SiC S-band and X-band technologies
Donald A. Gajewski, Satyaki Ganguly, Scott S. Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, John Palmour
págs. 1-6
págs. 7-19
A double snapback SCR ESD protection scheme for 28 nm CMOS process
Tao Hu, Shurong Dong, Hao Jin, Hei Wong, Zekun Xu, Xiang Li, Juin J. Liou
págs. 20-25
págs. 26-36
págs. 37-47
Improving ESD protection of 5 V NMOSFET large array device in 0.4 μm BCD process
Shao-Chang Huang, Hung-Wei Chen, Jen-Hang Yang, Mi-Chang Chang
págs. 48-54
págs. 55-65
págs. 66-74
págs. 75-87
Stability of miniaturized non-trimmed thick- and thin-film resistors
Tibor Rovensky, Alena Pietrikova, Igor Vehec, Lubomir Livovsky
págs. 88-94
págs. 95-104
págs. 105-111
págs. 112-120
Krzysztof Nieweglowski, Lukas Lorenz, Sebastian Lüngen, Tobias Tiedje, Klaus-Jürgen Wolter, Karlheinz Bock
págs. 121-126
págs. 127-133
Performance evaluation for a novel optoelectronic device for noninvasive monitoring thrombosis
Ke Zhao, Boan Pan, Zebing Li, Fulin Zhong, Pengbo Wang, Ting Li
págs. 134-139
A design and qualification of LED flip Chip-on-Board module with tunable color temperatures
Jiajie Fan, Jianwu Cao, Chaohua Yu, Cheng Qian, Xuejun Fan, Guoqi Zhang
págs. 140-148
Understanding chromaticity shifts in LED devices through analytical models
J. Lynn Davis, Karmann C. Mills, Georgiy Bobashev, Kelley J. Rountree, Michael Lamvik, Robert Yaga, Cortina Johnson
págs. 149-156
Zhaozhao Xu, Donghua Liu, Wei Xiong, Jun Hu, Wenting Duan, Hualun Chen, Wensheng Qian, Weiran Kong, Shichang Zou
págs. 157-162
págs. 163-169
págs. 170-180
Physics-based modeling of TID induced global static leakage in different CMOS circuits
Gennady I. Zebrev, Vasily V. Orlov, Maxim S. Gorbunov, Maxim G. Drosdetsky
págs. 181-186
págs. 187-196
Effective decapsulation of copper wire-bonded microelectronic devices for reliability assessment
Subramani Manoharan, Chandradip Patel, Patrick McCluskey, Michael Pecht
págs. 197-207
Ibrahim Khalilullah, Talukder Reza, Liangbiao Chen, Mark Placette, A.K.M. Monayem H. Mazumder, Jiang Zhou, Jiajie Fan, Cheng Qian, Guoqi Zhang, Xuejun Fan
págs. 208-214
Auxiliary power unit failure prediction using quantified generalized renewal process
Yujie Zhang, Lulu Wang, Shaonian Wang, Peng Wang, Haitao Liao, Yu Peng
págs. 215-225
Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing
Y.M. Lei, H. Wakabayashi, K. Tsutsui, H. Iwai, H. Furuhashi, S. Tomohisa, Soji Yamakawa, K. Kakushima
págs. 226-229
Investigation on nano-reinforced solder paste after reflow soldering part 1: Effects of nano-reinforced solder paste on melting, hardness, spreading rate, and wetting quality
págs. 230-237
págs. 238-247
Y.M. Lei, H. Wakabayashi, K. Tsutsui, H. Iwai, M. Furuhashi, S. Tomohisa, Soji Yamakawa, K. Kakushima
págs. 248-252
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