Microelectronics reliability

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  Año 2007, Vol. 47, Número 4-5

  • Comparison of deposition models for a TEOS LPCVD process.

    S. Holzer, A. Sheikholeslami, M. Karner, T. Grasser, S. Selberherr

    págs. 623-625

    

  • Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation.

    V. Turchanikov, A. Nazarov, V. Lysenko, V. Ostahov, O. Winkler, B. Spangenberg, H. Kurz

    págs. 626-630

    

  • Peculiarities of electron tunnel injection to the drain of EEPROMs.

    N. Baboux, C. Busseret, C. Plossu, P. Boivin

    págs. 631-634

    

  • Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors.

    M. Lemberger, A. Baunemann, A.J. Bauer

    págs. 635-639

    

  • Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization.

    P. Fiorenza, R. Lo Nigro, V. Raineri, S. Lombardo, R.G. Toro, G. Malandrino, I.L. Fragalà

    págs. 640-644

    

  • Electrical and structural properties of hafnium silicate thin films.

    I.Z. Mitrovic, O. Buiu, S. Hall, C. Bungey, T. Wagner, W. Davey, Y. Lu

    págs. 645-648

    

  • Effective work function of NiSi/HfO2 gate stacks measured with X-ray photoelectron spectroscopy.

    Yu.Yu. Lebedinskii, A.V. Zenkevich

    págs. 649-652

    

  • Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics.

    Salvador Dueñas Carazo, Helena Castán Lanaspa, Héctor García, Luis A. Bailón Vega, Kaupo Kukli, T. Hatanpäpä, M. Ritala, M. Leskelä

    págs. 653-656

    

  • Degradation kinetics of ultrathin HfO2 layers on Si(1 0 0) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM.

    A. Zenkevich, Yu Lebedinskii, G. Scarel, M. Fanciulli, A. Baturin, N. Lubovin

    págs. 657-659

    

  • Accurate determination of flat band voltage in advanced MOS structure.

    C. Leroux, G. Ghibaudo, G. Reimbold

    págs. 660-664

    

  • Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror.

    J. Martin-Martinez, R. Rodríguez, Montserrat Nafria i Maqueda, Xavier Aymerich Humet, J.H. Stathis

    págs. 665-668

    

  • Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon.

    I.V. Grekhov, G.G. Kareva, S.E. Tyaginov, M.I. Vexler

    págs. 669-672

    

  • Quantitative oxide charge determination by photocurrent analysis.

    M. Rommel, A.J. Bauer, H. Ryssel

    págs. 673-677

    

  • Extracting the relative dielectric constant for ¿high-? layers¿ from CV measurements ¿ Errors and error propagation.

    O. Buiu, S. Hall, O. Engstrom, B. Raeissi, M. Lemme, P.K. Hurley, K. Cherkaoui

    págs. 678-681

    

  • Test structures for dielectric spectroscopy of thin films at microwave frequencies.

    N. Delmonte, B.E. Watts, G. Chiorboli, P. Cova, R. Menozzi

    págs. 682-685

    

  • Density functional theory of high-k dielectric gate stacks.

    A.A. Demkov, O. Sharia, Xuhui Luo, J. Lee

    págs. 686-693

    

  • Full-band tunneling in high-? dielectric MOS structures.

    F. Sacconi, J.M. Jancu, M. Povolotskyi, A. Di Carlo

    págs. 694-696

    

  • Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures.

    R. Entner, T. Grasser, O. Triebl, H. Enichlmair, R. Minixhofer

    págs. 697-699

    

  • High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal¿organic precursor TBTDET.

    L. Pinzelli, M. Gross-Jean, Y. Bréchet, F. Volpi, Aurélien Bajolet, J.-C. Giraudin

    págs. 700-703

    

  • VSP ¿ A gate stack analyzer.

    M. Karner, A. Gehring, M. Wagner, R. Entner, S. Holzer, W. Goes, M. Vasicek, T. Grasser, H. Kosina, S. Selberherr

    págs. 704-708

    

  • Templates for LaAlO3 epitaxy on silicon.

    P. Boulenc, I. Devos

    págs. 709-713

    

  • Charge trapping and interface states in hydrogen annealed HfO2¿Si structures.

    Y.V. Gomeniuk, A.N. Nazarov, Ya.N. Vovk, V.S. Lysenko, Y. Lu, O. Buiu, S. Hall, R.J. Potter, P. Chalker

    págs. 714-717

    

  • Volatility and vapourisation characterisation of new precursors.

    S. Rushworth, H. Davies, A. Kingsley, T. Leese, R. Odedra

    págs. 718-721

    

  • Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition.

    Y. Lu, O. Buiu, S. Hall, I.Z. Mitrovic, W. Davey, R.J. Potter, P.R. Chalker

    págs. 722-725

    

  • Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures.

    I.P. Tyagulskyy, I.N. Osiyuk, V.S. Lysenko, A.N. Nazarov, S. Hall, O. Buiu, Y. Lu, R. Potter, P.R. Chalker

    págs. 726-728

    

  • Parameters extraction of hafnium based gate oxide capacitors.

    T. Nguyen, C. Busseret, Liviu Militaru, A. Poncet, D. Aimé, N. Baboux, C. Plossu

    págs. 729-732

    

  • Dielectric thin films for MEMS-based optical sensors.

    M. Martyniuk, J. Antoszewski, C.A. Musca, J. M. Dell, L. Faraone

    págs. 733-738

    

  • Passivation issues in active pixel CMOS image sensors.

    J.L. Regolini, D. Benoit, P. Morin

    págs. 739-742

    

  • Refined electrical analysis of two charge states transition characteristic of ¿borderless¿ silicon nitride.

    G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo

    págs. 743-747

    

  • Eyring acceleration model in thick nitride/oxide dielectrics.

    S.B. Evseev

    págs. 748-751