págs. 1-7
págs. 8-14
págs. 15-22
Seu and Sefi error detection and correction on a ddr3 memory system
Ana Cóbreces, Alberto Regadío Carretero, Jesús Tabero Godino, Pedro Reviriego Vasallo, Alfonso Sánchez-Macián, Juan Antonio Maestro
págs. 23-30
págs. 31-37
págs. 38-45
The threshold voltage degradation model of N Channel VDMOSFETs under PBT stress
Xuerong Ye, Kaixin Zhang, Cen Chen, Zhongwei Li, Yue Wang, Guofu Zhai
págs. 46-51
The experimental analysis and the mechanical model for the debonding failure of TSV-Cu/Si interface
Si Chen, Zhizhe Wang, Yunfei En, Yun Huang, Fei Qin, Tong An
págs. 52-66
págs. 67-85
págs. 86-97
págs. 98-111
págs. 112-119
págs. 120-127
págs. 128-128
Mission profile-based assessment of semiconductor technologies for automotive applications
Ali Ahari, Alexander Viehl, Oliver Bringmann, Wolfgang Rosenstiel
págs. 129-138
págs. 139-153
Towards reliability enhancement of graphene FET biosensor in complex analyte: Artificial neural network approach
Joyeeta Basu, Nirmalya Samanta, Sukhendu Jana, Chirasree RoyChaudhuri
págs. 154-159
págs. 160-169
Simulation study of single event effects in the SiC LDMOS with a step compound drift region
Meng-tian Bao, Ying Wang, Xing-ji Li, Chao-ming Liu, Cheng-hao Yu, Fei Cao
págs. 170-178
Implications of electron beam irradiation on Al/n-Si Schottky junction properties
Indudhar Panduranga Vali, Pramoda Kumara Shetty, M.G. Mahesha, V.C. Petwal, Jishnu Dwivedi, D.M. Phase, R.J. Choudhary
págs. 179-184
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