Microelectronics reliability

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  Año 2017, Número 69

  • A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

    Adelmo Ortiz-Conde, Andrea Sucre-González, Fabián Zarate Rincón, Reydezel Torres-Torres, R. Murphy-Arteaga, Juin J. Liou, F.J. García-Sánchez

    págs. 1-16

    

  • Optimization of the thermal contact resistance within press pack IGBTs

    Erping Deng, Zhibin Zhao, Peng Zhang, Yongzhang Huang, Jinyuan Liu

    págs. 17-28

    

  • A modified boost rectifier for elimination of circulating current in power factor correction applications

    Karthikeyan Venkitusamy, Sanjeevikumar Padmanaban, Michael Pecht, Abhishek Awasthi, Rajasekar Selvamuthukumaran

    págs. 29-35

    

  • An enhanced MOSFET threshold voltage model for the 6–300 K temperature range

    Nguyen Cong Dao, Abdallah El Kass, Mostafa Rahimi Azghadi, Craig T. Jin, Jonathan Scott, Philip H.W. Leong

    págs. 36-39

    

  • The role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode

    N. Shiwakoti, A. Bobby, K. Asokan, Bobby Antony

    págs. 40-46

    

  • Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory

    Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, F. Balestra

    págs. 47-51

    

  • Aging comparative analysis of high-performance FinFET and CMOS flip-flops

    Shiva Taghipour, Rahebeh Niaraki Asli

    págs. 52-59

    

  • Effects of finger dimension on low-frequency noise and optoelectronic properties of Ge metal-semiconductor-metal photodetectors with interdigitated Pt finger electrodes

    Munkhsaikhan Zumuukhorol, Zagarzusem Khurelbaatar, Shim-Hoon Yuk, Jonghan Won, Sung-Nam Lee, Chel-Jong Choi

    págs. 60-65

    

  • A perspective of the IPC report on lead-free electronics in military/aerospace applications

    Aleksandra Fortier, Michael Pecht

    págs. 66-70

    

  • Semiconductor package qualification based on the swelling temperature

    K.H. Song, J.S. Jang

    págs. 71-79

    

  • Effects of temperature and span amplitude on fretting corrosion behavior of tin-plated electrical contacts

    Min Jung Kim, Ho-Kyung Kim

    págs. 80-87

    

  • Temporal and frequency characteristic analysis of margin-related failures caused by an intermittent nano-scale fracture of the solder ball in a BGA package device

    Hosung Lee, Sanghyeon Baeg, Nelson Hua, ShiJie Wen

    págs. 88-99

    

  • An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation

    Saqib Ali Khan, Chulseung Lim, Geunyong Bak, Sanghyeon Baeg, Soonyoung Lee

    págs. 100-108

    

  • Single event double node upset tolerance in MOS/spintronic sequential and combinational logic circuits

    Ramin Rajaei

    págs. 109-114

    

  • Emulation-based fault analysis on RFID tags for robustness and security evaluation

    Ibrahim Mezzah, Hamimi Chemali, Omar Kermia

    págs. 115-125

    

  • Comments on “Extend orthogonal Latin square codes for 32-bit data protection in memory applications” Microelectron. Reliab. 63, 278–283 (2016)

    Shanshan Liu, Pedro Reviriego Vasallo, Alfonso Sánchez-Macián, Juan Antonio Maestro, Liyi Xiao

    págs. 126-129