Adelmo Ortiz-Conde, Andrea Sucre-González, Fabián Zarate Rincón, Reydezel Torres-Torres, R. Murphy-Arteaga, Juin J. Liou, F.J. García-Sánchez
págs. 1-16
Optimization of the thermal contact resistance within press pack IGBTs
Erping Deng, Zhibin Zhao, Peng Zhang, Yongzhang Huang, Jinyuan Liu
págs. 17-28
Karthikeyan Venkitusamy, Sanjeevikumar Padmanaban, Michael Pecht, Abhishek Awasthi, Rajasekar Selvamuthukumaran
págs. 29-35
An enhanced MOSFET threshold voltage model for the 6–300 K temperature range
Nguyen Cong Dao, Abdallah El Kass, Mostafa Rahimi Azghadi, Craig T. Jin, Jonathan Scott, Philip H.W. Leong
págs. 36-39
págs. 40-46
págs. 47-51
págs. 52-59
Munkhsaikhan Zumuukhorol, Zagarzusem Khurelbaatar, Shim-Hoon Yuk, Jonghan Won, Sung-Nam Lee, Chel-Jong Choi
págs. 60-65
págs. 66-70
págs. 71-79
págs. 80-87
págs. 88-99
An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation
Saqib Ali Khan, Chulseung Lim, Geunyong Bak, Sanghyeon Baeg, Soonyoung Lee
págs. 100-108
págs. 109-114
págs. 115-125
págs. 126-129
© 2001-2024 Fundación Dialnet · Todos los derechos reservados