Microelectronics reliability

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  Año 2007, Vol. 47, Número 12

  • Introduction to special section on electronic systems prognostics and health management.

    P. Sandborn, M. Pecht

    págs. 1847-1848

    

  • Prognostics implementation of electronics under vibration loading.

    J. Gu, D. Barker, M. Pecht

    págs. 1849-1856

    

  • Life cycle cost impact of using prognostic health management (PHM) for helicopter avionics.

    E. Scanff, K.L. Feldman, S. Ghelam, P. Sandborn, M. Glade, B. Foucher

    págs. 1857-1864

    

  • Advanced electronic prognostics through system telemetry and pattern recognition methods.

    L. Lopez

    págs. 1865-1873

    

  • Electronic prognostics ¿ A case study using global positioning system (GPS).

    D.W. Brown, P.W. Kalgren, C.S. Byington, M.J. Roemer

    págs. 1874-1881

    

  • Simplified terrain identification and component fatigue damage estimation model for use in a health and usage monitoring system.

    R. Heine, D. Barker

    págs. 1882-1888

    

  • A maintenance planning and business case development model for the application of prognostics and health management (PHM) to electronic systems.

    P.A. Sandborn, C. Wilkinson

    págs. 1889-1901

    

  • Electronic prognostics for switched mode power supplies.

    D. Goodman, J. Hofmeister, J. Judkins

    págs. 1902-1906

    

  • Feature extraction and damage-precursors for prognostication of lead-free electronics.

    P. Lall, M. Hande, C. Bhat, N. Islam, J. Suhling, J. Lee

    págs. 1907-1920

    

  • Concept of smart integrated life consumption monitoring system for electronics.

    V. Rouet, F. Minault, G. Diancourt, B. Foucher

    págs. 1921-1927

    

  • Growth of tin whiskers for lead-free plated leadframe packages in high humid environments and during thermal cycling.

    Y. Nakadaira, S. Jeong, J. Shim, J. Seo, S. Min, T. Cho, S. Kang, S. Oh

    págs. 1928-1949

    

  • Finite-element model-based fault diagnosis, a case study of a ceramic pressure sensor structure.

    M.S. Zarnik, D. Belavic, F. Novak

    págs. 1950-1957

    

  • The effects of rheological and wetting properties on underfill filler settling and flow voids in flip chip packages.

    J. Wang

    págs. 1958-1966

    

  • Thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems.

    A. Wymylowski

    págs. 1967-1968

    

  • Facing the challenge of designing for Cu/low-k reliability.

    W.D. van Driel

    págs. 1969-1974

    

  • Efficient damage sensitivity analysis of advanced Cu/low-k bond pad structures by means of the area release energy criterion.

    O. van der Sluis, R.A.B. Engelen, R.B.R. Van Silfhout, W.D. van Driel, M.A.J. van Gils

    págs. 1975-1982

    

  • Measuring the through-plane elastic modulus of thin polymer films in situ.

    M. van Soestbergen, L.J. Ernst, K.M.B. Jansen, W.D. van Driel

    págs. 1983-1988

    

  • Influence of matrix viscoelastic properties on thermal conductivity of TCA ¿ Numerical approach.

    T. Falat, A. Wymyslowski, J. Kolbe, K.M.B. Jansen, L. Ernst

    págs. 1989-1997

    

  • Microstructural considerations for ultrafine lead free solder joints.

    Z. Huang, P.P. Conway, R.C. Thomson

    págs. 1997-2006

    

  • Fatigue and thermal fatigue damage analysis of thin metal films.

    G.P. Zhang, C.A. Volkert, R. Schwaiger, R. Mönig, O. Kraft

    págs. 2007-2013

    

  • Adhesion of arbitrary-shaped thin-film microstructures.

    D. Bhate, M.L. Dunn

    págs. 2014-2024

    

  • Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design.

    M. Waleed Shinwari

    págs. 2025-2057

    

  • An experimental study of the thermally activated processes in polycrystalline silicon thin film transistors.

    L. Michalas, M. Exarchos, G.J. Papaioannou, D.N. Kouvatsos, A.T. Voutsas

    págs. 2058-2064

    

  • High-temperature performance of state-of-the-art triple-gate transistors.

    K. Akarvardar, A. Mercha, E. Simoen, V. Subramanian, C. Claeys, P. Gentil, S. Cristoloveanu

    págs. 2065-2069

    

  • Stress induced gate-drain leekage current in ultra-thin gate oxide.

    C. Petit, D. Zander

    págs. 2070-2081

    

  • Electrical measurements of voltage stressed Al2O3/GaAs MOSFET.

    Z. Tang, P.D. Ye, D. Lee, C.R. Wie

    págs. 2082-2087

    

  • Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors.

    E. Atanassova, D. Spassov, A. Paskaleva

    págs. 2088-2093

    

  • Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers.

    A. Paskaleva, M. Lemberger, A.J. Bauer

    págs. 2094-2099

    

  • Effects of width scaling and layout variation on dual damascene copper interconnect electromigration.

    M.H. Lin, K.P. Chang, K.C. Su, T. Wang

    págs. 2100-2108

    

  • Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics.

    P. Magnone, C. Pace, F. Crupi, G. Giusi

    págs. 2109-2113