Microelectronics reliability

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  Año 2008, Vol. 48, Número 8-9

  • ESD sensitivity investigation on a wide range of high density embedded capacitors.

    F. Barbier, S. Jacqueline

    págs. 1422-1426

    

  • IGBT module failure analysis in railway applications.

    X. Perpiñà, J.F. Serviere, X. Jordà, A. Fauquet, Salvador Hidalgo Villena, Jesús Roberto Urresti Ibáñez, J. Rebollo, M. Mermet-Guyennet

    págs. 1427-1431

    

  • Detection of localized UIS failure on IGBTs with the aid of lock-in thermography.

    G. Breglio, A. Irace, E. Napoli, M. Riccio, P. Spirito, K. Hamada, T. Nishijima, T. Ueta

    págs. 1432-1434

    

  • IGBT modules robustness during turn-off commutation.

    G. Busatto, C. Abbate, B. Abbate, F. Iannuzzo

    págs. 1435-1439

    

  • Testing semiconductor devices at extremely high operating temperatures.

    P. Borthen, G. Wachutka

    págs. 1440-1443

    

  • Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress.

    V. Banu, P. Broselard, Xavier Jordá Sanuy, Josep Montserrat, P. Godignon, J. Millán

    págs. 1444-1448

    

  • High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs.

    F. Iannuzzo

    págs. 1449-1452

    

  • Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications.

    J.L. Fock-Sui-Too, B. Chauchat, P. Austin, P. Tounsi, M. Mermet-Guyennet, R. Meuret

    págs. 1453-1458

    

  • Automotive IC reliability: Elements of the battle towards zero defects.

    F.G. Kuper

    págs. 1459-1463

    

  • 3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET.

    J.B. Sauveplane, P. Tounsi, E. Scheid, A. Deram

    págs. 1464-1467

    

  • Thermal modeling of high frequency DC�DC switching modules: Electromagnetic and thermal simulation of magnetic components.

    P. Cova, N. Delmonte, R. Menozzi

    págs. 1468-1472

    

  • Comparison between changes of ultracapacitors model parameters during calendar life and power cycling ageing tests.

    H. El Brouji, O. Briat, J.-M. Vinassa, N. Bertrand, E. Woirgard

    págs. 1473-1478

    

  • Thermal resistance assessment in multi-trenched power devices.

    J. Roig, B. Desoete, F. Bauwens, F. Lovadina, P. Moens

    págs. 1479-1484

    

  • Defect analysis concerning variation in characteristics of PIN diode for Hybrid Vehicles.

    Y. Goto

    págs. 1485-1489

    

  • Reduction of test effort. Looking for more acceleration for reliable components for automotive applications.

    R. Pufall, W. Kanert, S. Aresu, M. Goroll

    págs. 1490-1493

    

  • Analytical model for multi-junction solar cells prediction in space environment.

    A. Gauffier, J.-P. David, O. Gilard

    págs. 1494-1499

    

  • Novel simulation approach for transient analysis and reliable thermal management of power devices.

    A. Castellazzi, M. Ciappa

    págs. 1500-1504

    

  • Thermal heating within SOI.

    J.J. Koning, S. Lecaudey, E. Spaan, M. Stoutjesdijk, J.H.J. Janssen

    págs. 1505-1508

    

  • New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure.

    M. Goroll, R. Pufall, S. Aresu, W. Gustin

    págs. 1509-1512

    

  • Low-cost preparation method for exposing IC surfaces in stacked die packages by micro-abrasive blasting.

    S. Martens, B. Krueger, W. Mack, F. Voelklein, J. Wilde

    págs. 1513-1516

    

  • Detection of failure sites by focused ion beam and nano-probing in the interconnect of three-dimensional stacked circuit structures.

    Y. Yang, H. Bender, K. Arstila, B. Swinnen, B. Verlinden, I. De Wolf

    págs. 1517-1521

    

  • Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors.

    W. Polspoel, W. Vandervorst, L. Aguilera, M. Porti, Montserrat Nafria i Maqueda, Xavier Aymerich Humet

    págs. 1521-1524

    

  • Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications.

    M. Heer, P. Grombach, A. Heid, D. Pogany

    págs. 1525-1528

    

  • Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs.

    M. Sienkiewicz, P. Perdu, A. Firiti, K. Sanchez, O. Crepel, D. Lewis

    págs. 1529-1532

    

  • Voltage-based fault path tracing by transistor operating point analysis.

    M. Sanada

    págs. 1533-1538

    

  • Impact of silicon nitride CESL on NLDEMOS transistor reliability.

    G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo

    págs. 1539-1543

    

  • Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique.

    D.C. Moschou, M.A. Exarchos, D.N. Kouvatsos, G.J. Papaioannou, A. Arapoyanni, A.T. Voutsas

    págs. 1544-1548

    

  • Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants.

    M.F. Bukhori, S. Roy, A. Asenov

    págs. 1549-1552

    

  • MIMC reliability and electrical behavior defined by a physical layer property of the dielectric.

    J. Ackaert, R. Charavel, K. Dhondt, B. Vlachakis, L. De Schepper, M. Millecam, E. Vandevelde, P. Bogaert, A. Iline, E. De Backer, A. Vlad, J.-P. Raskin

    págs. 1553-1556

    

  • Failure analysis of a thin-film nitride MEMS package.

    Q. Li, J.F.L. Goosen, J.T.M. Van Beek, F. Van Keulen, K.L. Phan, G.Q. Zhang

    págs. 1557-1561