Microelectronics reliability

• 

  Año 2008, Vol. 48, Número 8-9

  • Determination of temperature change inside IC packages during laser ablation of molding compound.

    P. Schwindenhammer, H. Murray, P. Descamps, P. Poirier

    págs. 1263-1267

    

  • On chip�package stress interaction.

    W.D. van Driel, D.G. Yang, G.Q. Zhang

    págs. 1268-1273

    

  • Advanced thermal failure analysis and reliability investigations � Industrial demands and related limitations.

    A. Altes, R. Tilgner, M. Reissner, G. Steckert, G. Neumann

    págs. 1273-1278

    

  • Fast and rigorous use of thermal time constant to characterize back end of the line test structure in advanced technology.

    A. Reversy, P. Perdu, H. Murray, M. De la Bardonnie, P. Poirier

    págs. 1279-1284

    

  • Near-field detection of photon emission from silicon with 30 nm spatial resolution.

    D. Isakov, A.A.B. Tio, T. Geinzer, J.C.H. Phang, Y. Zhang, L.J. Balk

    págs. 1285-1288

    

  • Conditional time resolved photoemission for debugging ICs with intermittent faults.

    F. Zachariasse, J. Van Hassel

    págs. 1289-1294

    

  • Detectability of dynamic photon emission in static Si CCD for signal path determination in integrated circuits.

    P. Laskowski, A. Glowacki, C. Boit

    págs. 1295-1299

    

  • Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS.

    P. Moens, G. Van den Bosch

    págs. 1300-1305

    

  • Experimental evidence of �latent gate oxide damages� in medium voltage power MOSFET as a result of heavy ions exposure.

    G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi

    págs. 1306-1309

    

  • NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique.

    S. Aresu, R. Pufall, M. Goroll, W. Gustin

    págs. 1310-1312

    

  • Negative bias temperature instability in n-channel power VDMOSFETs.

    D. Dankovic, I. Manic, V. Davidovic, S. Djoric-Veljkovic, S. Golubovic, N. Stojadinovic

    págs. 1313-1317

    

  • Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications.

    D. Pic, A. Regnier, V. Pean, J.L. Ogier, D. Goguenheim

    págs. 1318-1321

    

  • Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120 nm and 65 nm technology.

    U. Kindereit, C. Boit, U. Kerst, S. Kasapi, R. Ispasoiu, R. Ng, W. Lo

    págs. 1322-1326

    

  • Timing analysis of scan design integrated circuits using stimulation by an infrared diode laser in externally triggered pulsing condition.

    T. Kiyan, C. Brillert, C. Boit

    págs. 1327-1332

    

  • Effect of physical defect on shmoos in CMOS DSM technologies.

    A. Machouat, G. Haller, V. Gouber, D. Lewis, P. Perdu, V. Pouget, P. Fouillat, F. Essely

    págs. 1333-1338

    

  • Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling.

    R. Biberger, G. Benstetter, T. Schweinboeck, P. Breitschopf, H. Goebel

    págs. 1339-1342

    

  • Layout analysis as supporting tool for failure localization: Basic principles and case studies.

    C. Hartmann, M. Wieberneit

    págs. 1343-1348

    

  • PLL soft functional failure analysis in advanced logic product using fault based analogue simulation and soft defect localization.

    L. Gao, C. Burmer

    págs. 1349-1353

    

  • Selective activation of failure mechanisms in packaged double-heterostructure light emitting diodes using controlled neutron energy irradiation.

    Y. Deshayes, I. Bord, G. Barreau, M. Aiche, P.H. Moretto, L. Béchou, A.C. Roehrig, Y. Ousten

    págs. 1354-1360

    

  • Thermal storage effects on AlGaN/GaN HEMT.

    F. Danesin, A. Tazzoli, F. Zanon, G. Meneghesso, E. Zanoni, A. Cetronio, C. Lanzieri, S. Lavanga, M. Peroni, P. Romanini

    págs. 1361-1365

    

  • Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques.

    M. Bouya, N. Malbert, N. Labat, D. Carisetti, P. Perdu, J.C. Clément, B. Lambert, M. Bonnet

    págs. 1366-1370

    

  • Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields.

    A. Tazzoli, G. Meneghesso, F. Zanon, F. Danesin, E. Zanoni, P. Bove, R. Langer, J. Thorpe

    págs. 1370-1374

    

  • Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies.

    F. Chen, O. Bravo, D. Harmon, M. Shinosky, J. Aitken

    págs. 1375-1383

    

  • Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle.

    K. Croes, G. Cannatá, L. Zhao, ZS. Tokei

    págs. 1384-1387

    

  • Fast electromigration wafer mapping for wafer fab process monitoring and improvement.

    Y. Li, L. Van Marwijk, Sudipta Nath

    págs. 1388-1393

    

  • Determination of migration effects in Cu-via structures with respect to process-induced stress.

    K. Weide-Zaage, J. Zhao, J. Ciptokusumo, O. Aubel

    págs. 1393-1397

    

  • Simulation of migration effects in nanoscaled copper metallizations.

    K. Weide-Zaage, F. Kashanchi, O. Aubel

    págs. 1398-1402

    

  • ESD issues in advanced CMOS bulk and FinFET technologies: Processing, protection devices and circuit strategies.

    C. Russ

    págs. 1403-1411

    

  • Reliability study of TaON capacitors: From leakage current characterization to ESD robustness prediction.

    M. Verchiani, E. Bouyssou, G. Fiannaca, F. Cantin, C. Anceau, P. Ranson

    págs. 1412-1416

    

  • Non-linear width scaling of ESD protection devices and link with p-well implant in BCD-processes.

    E.H.T. Olthof, G.J. De Raad

    págs. 1417-1421