Microelectronics reliability

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  Año 2009, Vol. 49, Número 9-11

  • Electromigration in width transition copper interconnect.

    A. Roy, Y. Hou, C.M. Tan

    págs. 1086-1089

    

  • Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling.

    J. Ciptokusumo, K. Weide-Zaage, O. Aubel

    págs. 1090-1095

    

  • A methodology to extract failure rates for low-k dielectric breakdown with multiple geometries and in the presence of die-to-die linewidth variation.

    M. Bashiri, L. Milor

    págs. 1096-1102

    

  • Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD).

    M. Diatta, E. Bouyssou, D. Trémouilles, P. Martinez, F. Roqueta, O. Ory, Marise Bafleur

    págs. 1103-1106

    

  • Impact and damage on deep sub-micron CMOS technology induced by substrate current due to ESD stress.

    PH. Galy, S. Dudit, M. Vallet, C. Richier, C. Entringer, F. Jezequel, E. Petit, J. Beltritti

    págs. 1107-1110

    

  • Breakdown characterization of gate oxides in 35 and 70 Å BCD8 smart power technology.

    A. Tazzoli, L. Cerati, A. Andreini, G. Meneghesso

    págs. 1111-1115

    

  • Laser THz emission microscope as a novel tool for LSI failure analysis.

    M. Yamashita, C. Otani, S. Kim, H. Murakami, M. Tonouchi, T. Matsumoto, Y. Midoh, K. Miura, K. Nakamae, K. Nikawa

    págs. 1116-1126

    

  • Jitter analysis of PLL-generated clock propagation using Jitter Mitigation techniques with laser voltage probing.

    J.Y. Liao, T. Ton, N. Slattengren, S. Kasapi, W.K. Lo, H.L. Marks, Y.S. Ng, T. Lundquist

    págs. 1127-1131

    

  • IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures.

    H. Köck, V. Kosel, C. Djelassi, M. Glavanovics, D. Pogany

    págs. 1132-1137

    

  • Investigation on marginal failure characteristics and related defects analysed by soft defect localization.

    C. Hartmann, M. Wieberneit

    págs. 1137-1142

    

  • Electrical modeling of the effect of beam profile for pulsed laser fault injection.

    C. Godlewski, V. Pouget, D. Lewis, M. Lisart

    págs. 1143-1147

    

  • An advanced quality and reliability assessment approach applied to thermal stress issues in electronic components and assemblies.

    M. Hertl, D. Weidmann, J.-C. Lecomte

    págs. 1148-1152

    

  • Failure analysis of video processor defined as No Fault Found (NFF): Reproduction in system level and advanced analysis technique in IC level.

    Jin Su Jeong, S.-D. Park

    págs. 1153-1157

    

  • Physical analysis, trimming and editing of nanoscale IC function with backside FIB processing.

    R. Schlangen, R. Leihkauf, U. Kerst, T. Lundquist, P. Egger, C. Boit

    págs. 1158-1164

    

  • Finite element analyses assisted Scanning Joule Expansion Microscopy on interconnects for failure analysis and reliability investigations.

    A.-K. Tiedemann, K. Kurz, M. Fakhri, R. Heiderhoff, J.C.H. Phang, L.J. Balk

    págs. 1165-1168

    

  • Magnetic microscopy for 3D devices: Defect localization with high resolution and long working distance on complex system in package.

    F. Infante, P. Perdu, D. Lewis

    págs. 1169-1174

    

  • Net integrity checking by optical localization techniques.

    G. Haller, A. Machouat, D. Lewis, V. Pouget

    págs. 1175-1781

    

  • A study of electrical characteristic changes in MOSFET by electron beam irradiation.

    Y. Mitsui, T. Sunaoshi, J.C. Lee

    págs. 1182-1187

    

  • Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale.

    M. Lanza, M. Porti, Montserrat Nafria i Maqueda, Xavier Aymerich Humet, G. Ghidini, A. Sebastiani

    págs. 1188-1191

    

  • Displacement current sensor for contact and intermittent contact scanning capacitance microscopy.

    R. Biberger, G. Benstetter, H. Goebel

    págs. 1192-1195

    

  • Lot reliability issues in commercial off the shelf (COTS) microelectronic devices.

    G. Mura, M. Vanzi

    págs. 1196-1199

    

  • GaN HEMT reliability.

    J.A. Del Alamo, J. Joh

    págs. 1200-1206

    

  • Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test.

    N. Ronchi, F. Zanon, A. Stocco, A. Tazzoli, E. Zanoni, G. Meneghesso

    págs. 1207-1210

    

  • Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures.

    A. Glowacki, P. Laskowski, C. Boit, P. Ivo, E. Bahat-Treidel, R. Pazirandeh, R. Lossy, J. Würfl, G. Tränkle

    págs. 1211-1215

    

  • Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.

    N. Malbert, N. Labat, A. Curutchet, C. Sury, V. Hoel, J.-C. De Jaeguer, N. Defrance, Y. Douvry, C. Dua, M. Oualli, C. Bru-Chevallier, J.-M. Bluet, W. Chikhaoui

    págs. 1216-1221

    

  • Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs.

    M. Piazza, C. Dua, M. Oualli, E. Morvan, D. Carisetti, F. Wyczisk

    págs. 1222-1225

    

  • Analysis of humidity effects on the degradation of high-power white LEDs.

    C.M. Tan, B.K. Eric Chen, G. Xu, Y. Liu

    págs. 1226-1230

    

  • Life-time estimation of high-power blue light-emitting diode chips.

    J.-M. Kang, J.-W. Kim, J.-H. Choi, D.-H. Kim, H. K. Kwon

    págs. 1231-1235

    

  • Reliability analysis of InGaN Blu-Ray laser diode.

    N. Trivellin, M. Meneghini, G. Meneghesso, E. Zanoni, K. Orita, M. Yuri, T. Tanaka, D. Ueda

    págs. 1236-1239

    

  • Evaluation of AlGaInP LEDs reliability based on accelerated tests.

    E. Nogueira, M. Vázquez, N. Núñez

    págs. 1240-1243