Microelectronics reliability

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  Año 2009, Vol. 49, Número 9-11

  • rication process simulation and reliability improvement of high-brightness LEDs.

    T.-L. Chou, C.-F. Huang, C.-N. Han, S.-Y. Yang, K.-N. Chiang

    págs. 1244-1249

    

  • Design for reliability of power electronics modules.

    H. Lu, C. Bailey, C. Yin

    págs. 1250-1255

    

  • Accelerated lifetime test of RF-MEMS switches under ESD stress.

    J. Ruan, N. Nolhier, G.J. Papaioannou, D. Trémouilles, V. Puyal, C. Villeneuve, T. Idda, F. Coccetti, R. Plana

    págs. 1256-1259

    

  • Characterisation of power modules ceramic substrates for reliability aspects.

    S. Pietranico, S. Pommier, S. Lefebvre, Z. Khatir, S. Bontemps

    págs. 1260-1266

    

  • Microstructure evolution observation for SAC solder joint: Comparison between thermal cycling and thermal storage.

    M. Berthou, P. Retailleau, H. Frémont, A. Guédon-Gracia, C. Jéphos-Davennel

    págs. 1267-1272

    

  • A new methodology for the identification of ball bond degradation during high-temperature aging tests on devices in standard plastic packages.

    B.M. Auguste, F. Hélène, L. Jean-Pierre, G. Annabelle, L. Pascal

    págs. 1273-1277

    

  • Multiscale simulation of aluminum thin films for the design of highly-reliable MEMS devices.

    H. Kubo, M. Ciappa, T. Masunaga, W. Fichtner

    págs. 1278-1282

    

  • A novel accelerated test technique for assessment of mechanical reliability of solder interconnects.

    G. Khatibi, W. Wroczewski, B. Weiss, H. Ipser

    págs. 1283-1287

    

  • Reading distance degradation mechanisms of near-field RFID devices.

    P. Jacob, W. Knecht, A. Kunz, G. Nicoletti, T. Lautenschlager, M. Mondada, D. Pachoud

    págs. 1288-1292

    

  • Heat management for power converters in sealed enclosures: A numerical study.

    M. Bernardoni, P. Cova, N. Delmonte, R. Menozzi

    págs. 1293-1298

    

  • Comparing drop impact test method using strain gauge measurements.

    Y. Liu, F.J.H.G. Kessels, W.D. van Driel, J.A.S. Van Driel, F.L. Sun, G.Q. Zhang

    págs. 1299-1303

    

  • Capacitive RF MEMS analytical predictive reliability and lifetime characterization.

    M. Matmat, F. Coccetti, A. Marty, R. Plana, C. Escriba, J.-Y. Fourniols, D. Esteve

    págs. 1304-1308

    

  • Dielectric charging in silicon nitride films for MEMS capacitive switches: Effect of film thickness and deposition conditions.

    U. Zaghloul, G. Papaioannou, F. Coccetti, P. Pons, R. Plana

    págs. 1309-1314

    

  • Numerical prediction of failure paths at a roughened metal/polymer interface.

    S.P.M. Noijen, O. van der Sluis, P.H.M. Timmermans, G.Q. Zhang

    págs. 1315-1318

    

  • Reliability challenges of automotive power electronics.

    U. Scheuermann

    págs. 1319-1325

    

  • Quasi hermetic packaging for new generation of spaceborn microwave equipment.

    P. Monfraix, R. Barbaste, J.L. Muraro, C. Drevon, J.L. Cazaux

    págs. 1326-1329

    

  • Characterization of ageing failures on power MOSFET devices by electron and ion microscopies.

    D. Martineau, T. Mazeaud, M. Legros, PH. Dupuy, C. Levade, G. Vanderschaeve

    págs. 1330-1333

    

  • A new built-in screening methodology to achieve zero defects in the automotive environment.

    V. Malandruccolo, M. Ciappa, H. Rothleiner, W. Fichtner

    págs. 1334-1340

    

  • Source electrode evolution of a low voltage power MOSFET under avalanche cycling.

    B. Bernoux, R. Escoffier, P. Jalbaud, J.M. Dorkel

    págs. 1341-1345

    

  • Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system.

    G. Haberfehlner, S. Bychikhin, V. Dubec, M. Heer, A. Podgaynaya, M. Pfost, M. Stecher, E. Gornik, D. Pogany

    págs. 1346-1351

    

  • Reliability considerations in pulsed power resonant conversion.

    F. Carastro, A. Castellazzi, J.C. Clare, M. Johnson, M. Bland, P.W. Wheeler

    págs. 1352-1357

    

  • Estimation of SiC JFET temperature during short-circuit operations

    M. Berkani, S. Lefebvre, N. Boughrara, Z. Khatir, J.-C. Faugières, P. Friedrichs, A. Haddouche

    págs. 1358-1362

    

  • Instable mechanisms during unclamped operation of high power IGBT modules.

    G. Busatto, C. Abbate, F. Iannuzzo, P. Cristofaro

    págs. 1363-1369

    

  • An investigation into the reliability of power modules considering baseplate solders thermal fatigue in aeronautical applicationsAn investigation into the reliability of power modules considering baseplate solders thermal fatigue in aeronautical applications.

    A. Micol, A. Zeanh, T. Lhommeau, S. Azzopardi, E. Woirgard, O. Dalverny, M. Karama

    págs. 1370-1374

    

  • Accelerated active ageing test on SiC JFETs power module with silver joining technology for high temperature application.

    L. Dupont, G. Coquery, K. Kriegel, A. Melkonyan

    págs. 1375-1380

    

  • Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics.

    F. Molière, B. Foucher, P. Perdu, A. Bravaix

    págs. 1381-1385

    

  • 1300 V, 2 ms pulse inductive load switching test circuit with 20 ns selectable crowbar intervention.

    L. Rossi, M. Riccio, E. Napoli, A. Irace, G. Breglio, P. Spirito

    págs. 1386-1390

    

  • Analysis of the dynamic behavior changes of supercapacitors during calendar life test under several voltages and temperatures conditions.

    H. El Brouji, O. Briat, J.-M. Vinassa, H. Henry, E. Woirgard

    págs. 1391-1397

    

  • Uni-axial mechanical stress effect on Trench Punch through IGBT under short-circuit operation.

    Y. Belmehdi, S. Azzopardi, A. Benmansour, J.-Y. Delétage, E. Woirgard

    págs. 1398-1403