Microelectronics reliability

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  Año 2008, Vol. 48, Número 8-9

  • Bridging the business model gap between the semiconductor industry and the automotive industry with respect to quality and reliability.

    M. De Jong, D. Freeman

    págs. 1112-1113

    

  • Reliability- and process-variation aware design of integrated circuits.

    M. Alam

    págs. 1114-1122

    

  • Systems-in-foil � Devices, fabrication processes and reliability issues.

    J. Van den Brand, J. De Baets, T. Van Mol, A. Dietzel

    págs. 1123-1128

    

  • Influence of the organic pollution on the reliability of HE9 connectors.

    L. Crétinon, M. El Hadachi, F. Augereau, L. Doireau, G. Despaux

    págs. 1129-1133

    

  • Reliability issues of e-Cubes heterogeneous system integration.

    G. Janczyk, T. Bieniek, J. Szynka, P. Grabiec

    págs. 1133-1138

    

  • Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip.

    C. Salm, V.M. Blanco Carballo, J. Melai, J. Schmitz

    págs. 1139-1143

    

  • Laser decapsulation of plastic packages for failure analysis: Process control and artefact investigations.

    A. Aubert, L. Dantas De Morais, J.P. Rebrasse

    págs. 1144-1148

    

  • Solder joint and trace line failure simulation and experimental validation of fan-out type wafer level packaging subjected to drop impact.

    C.-Y. Chou, T.-Y. Hung, S.-Y. Yang, M.-C. Yew, W.-K. Yang, K.-N. Chiang

    págs. 1149-1154

    

  • Ball grid array (BGA) solder joint intermittency real-time detection.

    N. Roth, W. Wondrak, A. Willikens, J. Hofmeister

    págs. 1155-1160

    

  • Lifetime analysis of solder joints in high power IGBT modules for increasing the reliability for operation at 150 °C.

    L. Feller, Samuel Hartmann, D. Schneider

    págs. 1161-1166

    

  • Fracture morphology and mechanism of IMC in Low-Ag SAC Solder/UBM (Ni(P)-Au) for WLCSP.

    F. Sun, P. Hochstenbach, W.D. van Driel, G.Q. Zhang

    págs. 1167-1170

    

  • Insights on trap generation and breakdown in ultra thin SiO2 and SiON dielectrics from low voltage stress-induced leakage current measurements.

    P.E. Nicollian

    págs. 1171-1177

    

  • On the temperature dependence of NBTI recovery.

    Thomas Aichinger, M. Nelhiebel, T. Grasser

    págs. 1178-1184

    

  • Optimization of gate poly TAB size and reliability on short channel pMOSFET.

    J.-E. Seok, H.J. Kim, J.-Y. Seo, S.-J. Hwang, B.-H. Kwak

    págs. 1185-1187

    

  • Voltage acceleration of time dependent breakdown of ultra-thin NO and NON dielectrics.

    P. Hofmann

    págs. 1189-1192

    

  • Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode.

    E. Atanassova, N. Stojadinovic, A. Paskaleva

    págs. 1193-1197

    

  • Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. nitride.

    M. Diop, N. Revil, M. Marin, F Monsieur, Pascal Chevalier, G. Ghibaudo

    págs. 1198-1201

    

  • Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications.

    M.L. Bourqui, L. Béchou, O. Gilard, Y. Deshayes, P. Del Vecchio, L.S. How, F. Rosala, Y. Ousten, A. Touboul

    págs. 1202-1207

    

  • Sulfur-contamination of high power white LED.

    G. Mura, G. Cassanelli, F. Fantini, M. Vanzi

    págs. 1208-1211

    

  • InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability.

    X. Liu, J.S. Yuan, J.J. Liou

    págs. 1212-1215

    

  • Reliability improvement of InGaN LED backlight module by accelerated life test (ALT) and screen policy of potential leakage LED.

    Jin Su Jeong, J.-K. Jung, S.-D. Park

    págs. 1216-1220

    

  • Charging and discharging phenomena in electrostatically-driven single-crystal-silicon MEM resonators: DC bias dependence and influence on the series resonance frequency.

    S. Kalicinski, M. Wevers, I. De Wolf

    págs. 1221-1226

    

  • Temperature stability of a piezoresistive MEMS resonator including self-heating.

    S. Bendida, J.J. Koning, J.J.M. Bontemps, J.T.M. Van Beek, D. Wu, M.A.J. van Gils, Sudipta Nath

    págs. 1227-1231

    

  • Kelvin probe microscopy for reliability investigation of RF-MEMS capacitive switches.

    A. Belarni, M. Lamhamdi, P. Pons, L. Boudou, J. Guastavino, Y. Segui, G. Papaioannou, R. Plana

    págs. 1232-1236

    

  • ESD failure signature in capacitive RF MEMS switches.

    J. Ruan, G.J. Papaioannou, N. Nolhier, N. Mauran, Marise Bafleur, F. Coccetti, R. Plana

    págs. 1237-1240

    

  • Alpha particle radiation effects in RF MEMS capacitive switches.

    J. Ruan, E. Papandreou, M. Lamhamdi, M. Koutsoureli, F. Coccetti, P. Pons, G. Papaioannou, R. Plana

    págs. 1241-1244

    

  • Reliability and failure in single crystal silicon MEMS devices.

    A. Neels, A. Dommann, A. Schifferle, O. Papes, E. Mazza

    págs. 1245-1247

    

  • Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation.

    M. Lamhamdi, P. Pons, U. Zaghloul, L. Boudou, F. Coccetti, J. Guastavino, Y. Segui, G. Papaioannou, R. Plana

    págs. 1248-1252

    

  • Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures.

    P. Jacob, W. Rothkirch

    págs. 1253-1257

    

  • Silicon based system in package: Improvement of passive integration process to avoid TBMS failure.

    C. Gautier, S. Ledain, S. Jacqueline, M. Nongaillard, V. Georgel, K. Danilo

    págs. 1258-1262