Microelectronics reliability

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  Año 2007, Vol. 47, Número 4-5

  • Electrical characterization and analysis techniques for the high-k era.

    C.D. Young, D. Heh, A. Neugroschel, R. Choi, B.H. Lee, G. Bersuker

    págs. 479-488

    

  • Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.

    G. Reimbold, J. Mitard, X. Garros, C. Leroux, G. Ghibaudo, S. Kudelka

    págs. 489-496

    

  • Reliability aspects of Hf-based capacitors: Breakdown and trapping effects.

    R. Duschl, M. Kerber, A. Avellan, S. Jackschik, U. Schroeder, S. Kudelka

    págs. 497-500

    

  • Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks.

    P. Srinivasan, F. Crupi, E. Simoen, P. Magnone, C. Pace, D. Misra, C. Claeys

    págs. 501-504

    

  • NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase.

    A. Shickova, B. Kaczer, A. Veloso, M. Aoulaiche, M. Houssa, H. Maes, G. Groeseneken, J.A. Kittl

    págs. 505-507

    

  • Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C¿V technique.

    G. Puzzilli, B. Govoreanu, F. Irrera, M. Rosmeulen, J.V. Houdt

    págs. 508-512

    

  • Reliability screening of high-k dielectrics based on voltage ramp stress.

    A. Kerber, L. Pantisano, A. Veloso, G. Groeseneken, M. Kerber

    págs. 513-517

    

  • Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks.

    Z. Li, T. Schram, L. Pantisano, A. Stesmans, T. Conard, S. Shamuilia, V.V. Afanasiev, A. Akheyar, S. Van Elshocht, D.P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, S. De Gendt, K. De Meyer

    págs. 518-520

    

  • Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors.

    A. Rothschild, R. Mitsuhashi, C. Kerner, X. Shi, J.L. Everaert, L. Date, T. Conard, O. Richard, C. Vrancken, R. Verbeeck, A. Veloso, A. Lauwers, M. De Potter, I. Debusschere, M. Jurczak, M. Niwa, P. Absil, S. Biesemans

    págs. 521-524

    

  • Distribution and generation of traps in SiO2/Al2O3 gate stacks.

    I. Crupi, R. Degraeve, B. Govoreanu, D.P. Brunco, P. Roussel, J. van Houdt

    págs. 525-527

    

  • Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology.

    R. Endres, Y. Stefanov, U. Schwalke

    págs. 528-531

    

  • Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium.

    S.F. Galata, E.K. Evangelou, Y. Panayiatatos, A. Sotiropoulos, A. Dimoulas

    págs. 532-535

    

  • Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-? dielectrics.

    S. Abermann, J. Efavi, G. Sjöblom, M. Lemme, J. Olsson, E. Bertagnolli

    págs. 536-539

    

  • Epitaxial growth of LaAlO3 on Si(0 0 1) using interface engineering.

    C. Merckling, G. Delhaye, M. El-Kazzi, S. Gaillard, Y. Rozier, L. Rapene, B. Chenevier, O. Marty, G. Saint-Girons, M. Gendry, Y. Robach, G. Hollinger

    págs. 540-543

    

  • Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions.

    E. Amat, Rosana Rodríguez Martínez, Montserrat Nafria i Maqueda, Xavier Aymerich Humet, J.H. Stathis

    págs. 544-547

    

  • An investigation of surface state capture cross-sections for metal¿oxide¿semiconductor field-effect transistors using HfO2 gate dielectrics.

    F.-C. Chiu, W.-C. Shih, J.Y.-m. Lee, H.-L. Hwang

    págs. 548-551

    

  • Channel hot carrier effects in n-MOSFET devices of advanced submicron CMOS technologies.

    G. La Rosa, S.E. III Rauch

    págs. 552-558

    

  • Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability.

    B. Kaczer, R. Degraeve, Ph. Roussel, G. Groeseneken

    págs. 559-566

    

  • Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements.

    G. Néau, F. Martinez, M. Valenza, J.C. Vildeuil, E. Vincent, F. Boeuf, F. Payet, K. Rochereau

    págs. 567-572

    

  • Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization.

    C. Leyris, F. Martinez, M. Valenza, A. Hoffmann, J.C. Vildeuil

    págs. 573-576

    

  • Low-frequency noise in hot-carrier degraded nMOSFETs.

    C. Salm, E. Hoekstra, J.S. Kolhatkar, A.J. Hof, H. Wallinga, J. Schmitz

    págs. 577-580

    

  • Effect of oxide breakdown on RS latches.

    R. Fernandez, R. Rodríguez, Montserrat Nafria i Maqueda, Xavier Aymerich Humet

    págs. 581-584

    

  • Silicon nanocrystal non-volatile memory for embedded memory scaling.

    R.F. Steimle, R. Muralidhar, Rajesh A. Rao, M. Sadd, C.T. Swift, J. Yater, B. Hradsky, S. Straub, H. Gasquet, L. Vishnobhotla, E.J. Prinz, T. Merchant, B. Acred, K. Chang, B.E. Jr. White

    págs. 585-892

    

  • Study of nanocrystal memory integration in a Flash-like NOR device.

    C. Gerardi, S. Lombardo, G. Ammendola, G. Costa, V. Ancarani, D. Mello, S. Giuffrida, M.C. Plantamura

    págs. 593-597

    

  • High-K dielectrics for inter-poly application in non volatile memories.

    A. Sebastiani, R. Piagge, A. Modelli, G. Ghidini

    págs. 598-601

    

  • Ionising radiation and electrical stress on nanocrystal memory cell array.

    A. Cester, A. Gasperin, N. Wrachien, A. Paccagnella, V. Ancarani, C. Gerardi

    págs. 602-605

    

  • Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications.

    H.-h. Hsu, J.Y.-m. Lee

    págs. 606-609

    

  • Experimental study of carrier transport in multi-layered structures.

    G. Tao, C. Ouvrard, H. Chauveau, Sudipta Nath

    págs. 610-614

    

  • Reliability of HTO based high-voltage gate stacks for flash memories.

    Y. Raskin, A. Salameh, D. Betel, Y. Roizin

    págs. 615-618

    

  • The characterization of retention properties of metal¿ferroelectric (PbZr0.53Ti0.47O3)¿insulator (Dy2O3, Y2O3)¿semiconductor devices.

    Y.-D. Su, W.-C. Shih, J.Y.-m. Lee

    págs. 619-622