Microelectronics reliability

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  Año 2009, Vol. 49, Número 9-11

  • MEMS reliability: Where are we now?

    D.M. Tanner

    págs. 937-940

    

  • ESD testing of devices, ICs and systems.

    T. Smedes

    págs. 941-945

    

  • Electrical aging behavioral modeling for reliability analyses of ionizing dose effects on an n-MOS simple current mirror.

    C. Bestory, F. Marc, S. Duzellier, H. Levi

    págs. 946-951

    

  • Correlation between EOS customer return failure cases and Over Voltage Stress (OVS) test method.

    J.L. Lefebvre, C. Gautier, F. Barbier

    págs. 952-957

    

  • Fast reliability qualification of SiP products.

    C. Regard, C. Gautier, H. Frémont, P. Poirier, M.A. Xiaosong, K.M.B. Jansen

    págs. 958-962

    

  • Electromagnetic immunity model of an ADC for microcontroller�s reliability improvement.

    J.-B. Gros, G. Duchamp, A. Meresse, J.-L. Levant

    págs. 963-966

    

  • Comparison and evaluation of newest failure rate prediction models: FIDES and RIAC 217Plus.

    M. Held, K. Fritz

    págs. 967-971

    

  • Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation.

    M. Ciappa, L. Mangiacapra, M. Stangoni, S. Ott, W. Fichtner

    págs. 972-976

    

  • CMOS logic gate performance variability related to transistor network arrangements.

    D.N. Da Silva, A.I. Reis, R.P. Ribas

    págs. 977-981

    

  • Process dependence of BTI reliability in advanced HK MG stacks.

    X. Garros, M. Casse, M. Rafik, C. Fenouillet-Béranger, G. Reimbold, Fernando Martín Rubio, C. Wiemer, F. Boulanger

    págs. 982-988

    

  • Study for pulse stress NBTI characteristics degradation stress.

    N. Kawai, Y. Dohi, N. Wakai

    págs. 989-993

    

  • NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer.

    Y.W. Jeon, D.H. Ka, C.G. Yu, W.-J. Cho, M. Saif Islam, J.T. Park

    págs. 994-997

    

  • Impact of O�Si�O bond angle fluctuations on the Si�O bond-breakage rate.

    S. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, T. Grasser

    págs. 998-1002

    

  • Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs.

    I. Manic, D. Dankovic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, N. Stojadinovic

    págs. 1003-1007

    

  • Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities.

    C. Benard, G. Math, P. Fornara, J.-L. Ogier, D. Goguenheim

    págs. 1008-1012

    

  • On the temperature and voltage dependence of short-term negative bias temperature stress.

    PH. Hehenberger, P.-J. Wagner, H. Reisinger, T. Grasser

    págs. 1013-1017

    

  • Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETs.

    M.A. Exarchos, G.J. Papaioannou, J. Jomaah, F. Balestra

    págs. 1018-1023

    

  • Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses.

    Albert Crespo Yepes, J. Martin-Martinez, R. Rodriguez, Montserrat Nafria i Maqueda, Xavier Aymerich Humet

    págs. 1024-1028

    

  • Effects of electromagnetic near-field stress on SiGe HBT�s reliability.

    A. Alaeddine, M. Kadi, K. Daoud, B. Mazari

    págs. 1029-1032

    

  • Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions.

    G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi

    págs. 1033-1037

    

  • Behavior of hot carrier generation in power SOI LDNMOS with shallow trench isolation (STI).

    J. Liao, C.M. Tan, G. Spierings

    págs. 1038-1043

    

  • NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs.

    C.-W. Lee, I. Ferain, A. Afzalian, R. Yan, N. Dehdashti, P. Razavi, J.-P. Colinge, J.T. Park

    págs. 1044-1047

    

  • Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter.

    N. Berbel, R. Fernandez, I. Gil

    págs. 1048-1051

    

  • Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks.

    Enrique Alberto Miranda, J. Martin-Martinez, E. O'Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O'Oconnell, P.K. Hurley

    págs. 1052-1055

    

  • Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories.

    J. Postel-Pellerin, F. Lalande, P. Canet, R. Bouchakour, F. Jeuland, L. Moracho

    págs. 1056-1059

    

  • Modeling charge variation during data retention of MLC Flash memories.

    J. Postel-Pellerin, F. Lalande, P. Canet, R. Bouchakour, F. Jeuland, L. Morancho

    págs. 1060-1063

    

  • Statistical RTS model for digital circuits.

    L. Brusamarello, G.I. Wirth, R. Da Silva

    págs. 1064-1069

    

  • A Modelisation of the temperature dependence of the Fowler�Nordheim current in EEPROM memories.

    M. Roca, R. Laffont, G. Micolau, F. Lalande, O. Pizzuto

    págs. 1070-1073

    

  • Percolation theory applied to PZT thin films capacitors breakdown mechanisms.

    M.T. Chentir, J.-B. Jullien, B. Valtchanov, E. Bouyssou, L. Ventura, C. Anceau

    págs. 1074-1078

    

  • Do ESD fails in systems correlate with IC ESD robustness?

    W. Stadler, T. Brodbeck, R. Gärtner, H. Gossner

    págs. 1079-1085